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IRFBA32N50K Arkusz danych(PDF) 2 Page - International Rectifier |
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IRFBA32N50K Arkusz danych(HTML) 2 Page - International Rectifier |
2 / 3 page IRFBA32N50K 2 www.irf.com PROVISIONAL Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 12 ––– ––– SVDS = 50V, ID = 19A Qg Total Gate Charge ––– ––– 195 ID = 32A Qgs Gate-to-Source Charge ––– ––– 75 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 90 VGS = 10V, td(on) Turn-On Delay Time ––– 20 ––– VDD = 250V tr Rise Time ––– 60 ––– ID = 32A td(off) Turn-Off Delay Time ––– 45 ––– RG = 4.3Ω tf Fall Time ––– 40 ––– VGS = 10V, Ciss Input Capacitance ––– 5300 ––– VGS = 0V Coss Output Capacitance ––– 540 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 33 ––– pF ƒ = 1.0MHz Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.14 Ω VGS = 10V, ID = 19A VGS(th) Gate Threshold Voltage 3.5 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 50 µA VDS = 500V, VGS = 0V ––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. I SD ≤ 32A, di/dt ≤ TBDA/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L = 4.3mH, RG = 25Ω, IAS = 32A, Pulse width ≤ 400µs; duty cycle ≤ 2%. Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 760 mJ IAR Avalanche Current ––– 32 A EAR Repetitive Avalanche Energy ––– 36 mJ Avalanche Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.35 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 58 Thermal Resistance |
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