2000 Aug 02

2

Philips Semiconductors

Product specification

NPN/PNP high voltage transistors

BF485PN

FEATURES

• High voltage (max. 350 V)

• Low current (max. 200 mA)

• High power dissipation (600 mW)

• Two independently working transistors.

APPLICATIONS

• Complementary high-voltage configurations

• Hook switch in telephone applications.

DESCRIPTION

NPN/PNP transistors in a SOT457 (SC-74) plastic

package.

MARKING CODE

PINNING

TYPE NUMBER

CODE

BF485PN

HS

PIN

DESCRIPTION

1 and 4

emitter TR1; TR2

5 and 2

base TR1; TR2

6 and 3

collector TR1; TR2

handbook, halfpage

13

2

4

5

6

Top view

MAM439

13

2

4

5

6

TR1

TR2

Fig.1 Simplified outline (SOT457) and symbol

LIMITING VALUES

In accordance with Absolute Maximum Rating System (IEC 60134).

Note

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

collector-base voltage

open emitter

−

350

V

collector-emitter voltage

open base

−

350

V

emitter-base voltage

open collector

−

6V

output current (DC)

−

100

mA

peak collector current

−

200

mA

total power dissipation

−

600

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature range

−65

+150

°C

Per device

total power dissipation

−

300

mW