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IRF540NL Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IRF540NL
Szczegółowy opis  HEXFET짰 Power MOSFET
Download  10 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF540NL Arkusz danych(HTML) 2 Page - International Rectifier

  IRF540NL Datasheet HTML 1Page - International Rectifier IRF540NL Datasheet HTML 2Page - International Rectifier IRF540NL Datasheet HTML 3Page - International Rectifier IRF540NL Datasheet HTML 4Page - International Rectifier IRF540NL Datasheet HTML 5Page - International Rectifier IRF540NL Datasheet HTML 6Page - International Rectifier IRF540NL Datasheet HTML 7Page - International Rectifier IRF540NL Datasheet HTML 8Page - International Rectifier IRF540NL Datasheet HTML 9Page - International Rectifier Next Button
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IRF540NS/IRF540NL
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S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 16A, VGS = 0V
„
trr
Reverse Recovery Time
–––
115 170
ns
TJ = 25°C, IF = 16A
Qrr
Reverse Recovery Charge
–––
505 760
nC
di/dt = 100A/µs
„‡
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
33
110
A
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L =1.5mH
RG = 25Ω, IAS = 16A. (See Figure 12)
ƒ ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Uses IRF540N data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.12 –––
V/°C Reference to 25°C, ID = 1mA
‡
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
44
m
VGS = 10V, ID = 16A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
21
––– –––
S
VDS = 50V, ID = 16A
„
‡
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
71
ID = 16A
Qgs
Gate-to-Source Charge
–––
–––
14
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
21
VGS = 10V, See Fig. 6 and 13
„‡
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 50V
tr
Rise Time
–––
35
–––
ID = 16A
td(off)
Turn-Off Delay Time
–––
39
–––
RG = 5.1Ω
tf
Fall Time
–––
35
–––
VGS = 10V, See Fig. 10
„
‡
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 1960 –––
VGS = 0V
Coss
Output Capacitance
–––
250 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
40
–––
pF
ƒ = 1.0MHz, See Fig. 5
‡
EAS
Single Pulse Avalanche Energy
‚‡
––– 700
… 185† mJ
IAS = 16A, L = 1.5mH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current


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