2N5015 datasheet(2/2 Pages) SSDI

Numer części	2N5015

Szczegółowy opis	0.5 AMP 800 - 1000 Volts NPN Transistor

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Producent	SSDI [Solid States Devices, Inc]

Strona internetowa	http://www.ssdi-power.com

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Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

2N5013 thru 2N5015

Electrical Characteristic

1/

Symbol

Min

Max

Units

Collector – Emitter Breakdown Voltage

(IC = 200µADC, RBE = 1KΩ)

2N5013

2N5014

2N5015

BVCER

800

900

1000

––

V

Collector–Base Breakdown Voltage

(IC = 200µADC)

2N5013

2N5014

2N5015

BVCBO

800

900

1000

––

V

Emitter–Base Breakdown Voltage

(IE = 50µADC)

BVEBO

5

––

V

Collector Cutoff Current

(TC = 100°)

VCB = 650V (2N5013)

VCB = 700V (2N5014)

VCB = 750V (2N5015)

VCB = 650V (2N5013)

VCB = 700V (2N5014)

VCB = 750V (2N5015)

ICBO

––

12

100

µAdc

DC Current Gain 2/

(IC = 5mADC, VCE = 10VDC)

(IC = 20mADC, VCE = 10VDC)

hFE

10

30

180

––

Collector – Emitter Saturation Voltage 2/

(IC = 20mADC, IB = 5mADC)

2N5013

2N5014

2N5015

VCE(Sat)

––

1.6

1.8

Vdc

Base – Emitter Saturation Voltage 2/

(IC = 20mADC, IB = 5mADC)

VBE(Sat)

––

1.0

Vdc

Current Gain Bandwidth Product

(IC = 20mADC, VCE = 10VDC, f = 1 – 20MHz)

fT

20

––

MHz

Output Capacitance

(VCB = 10VDC, IE = 0ADC, f = 1.0MHz)

Cob

––

30

pF

Delay Time

td

––

200

nsec

Rise Time

tr

––

1200

nsec

Storage Time

ts

––

3.0

µsec

Fall Time

VCC = 125VDC,

IC = 100mADC,

IB1 = 20mADC,

IB2 = 20mADC

tf

––

800

nsec

NOTES:

1/

Unless Otherwise Specified: All Tests @25ºC

2/

Pulse Test: Pulse Width = 300 µS, Duty Cycle = 2%

For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.

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