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IRF7210 Arkusz danych(PDF) 1 Page - International Rectifier |
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IRF7210 Arkusz danych(HTML) 1 Page - International Rectifier |
1 / 7 page Parameter Max. Units VDS Drain- Source Voltage -12 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±16 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V ±12 A IDM Pulsed Drain Current ±100 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 12 V VGSM Gate-to-Source Voltage Single Pulse tp<10µs 16 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 10/19/04 IRF7210 HEXFET® Power MOSFET Parameter Max. Units RθJA Maximum Junction-to-Ambient 50 °C/W Thermal Resistance These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. VDSS = -12V RDS(on) = 0.007Ω Description Absolute Maximum Ratings W www.irf.com 1 l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel Top View 8 1 2 3 4 5 6 7 D D D G S A D S S SO-8 PD- 91844B |
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