Philips Semiconductors

Si4420DY

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 28 May 2001

3 of 12

9397 750 08239

© Philips Electronics N.V. 2001. All rights reserved.

Fig 1.

Normalized total power dissipation as a

function of ambient temperature.

Fig 2.

Normalized continuous drain current as a

function of ambient temperature.

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa11

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

P

der

T

amb

(

o

C)

(%)

03aa19

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

I

der

T

amb

(

o

C)

(%)

P

der

P

tot

P

tot 25 C

°

()

----------------------

100%

×

=

I

D

I

D

I

D25 C

°

()

-------------------

100%

×

=

03ae55

10-2

10-1

1

10

102

10-1

1

10

102

(A)

D.C.

100 ms

10 ms

1 ms

tp = 10 µs

100 µs

tp

tp

T

P

t

T