Subject to change without notice.

www.cree.com

FEATURES

XThin LED Performance

450 nm – 24 mW min.

Low Forward Voltage

Single Wire Bond Structure

Class 2 ESD Rating

•

–

•

•

•

APPLICATIONS

LCD Backlighting

Digital Camera Flash for Mobile Appliance

LED Video Displays

Audio Product Display Lighting

•

•

•

•

CxxxXT420-Sxx00-A

Cree’s XThin LEDs are the next generation of solid-state LEDs that combine highly efficient InGaN materials with Cree’s

geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond

connection. These vertically structured LED chips are approximately 175 microns in height and require a low forward

voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications and the ability to withstand

1000 V ESD. Applications for XThin LEDs include next-generation mobile appliances for use in their LCD backlights and

digital camera flash where brightness, sub-miniaturization, and low power consumption are required.

CxxxXT420-Sxx00-A Chip Diagram

Top View

Bottom View

Die Cross Section

G•SiC LED Chip

420 x 420 μm

Gold Bond Pad

105 μm Diameter

SiC Substrate

t = 175 µm

Backside

Metalization

Cathode (-)

Anode (+)