1996 Oct 08

7

Philips Semiconductors

Objective specification

Quadrature demodulator

TDA8040T

Notes to the characteristics

2. The I and Q channel output voltages are measured with the following conditions:

b) the higher frequencies (140.5 MHz) are filtered out.

3. The I and Q channels gain is defined by

.

The gains are measured with the conditions defined in note 2.

Voltage controlled oscillator (VCO)

minimum input oscillator frequency

−−

21.4

MHz

maximum input oscillator frequency

300

−−

MHz

∆f

frequency deviation

−

6

−

MHz

∆f

drift

frequency drift

note 8

−−

100

kHz

frequency shift

−−

100

kHz

oscillator carrier-to-noise ratio

at 10 kHz;

note 9

−

85

−

dBc/Hz

at 100 kHz;

note 9

−

105

−

dBc/Hz

required voltage drive level for external

oscillator injection (peak-to-peak value)

100

−−

mV

source resistance for external oscillator

generator

−−

50

Ω

I and Q amplifiers

I and Q channel input voltage

(peak-to-peak value)

note 10

−

0.1

−

V

I and Q channel output voltage

(peak-to-peak value)

note 10

−

0.5

−

V

at 1 dB gain

compression;

note 10

1.0

−−

V

IM3

intermodulation distortion in the

I and Q channels

note 11

40

−−

dB

bandwidth of I and Q amplifiers

at 0.5 dB

25

−−

MHz

α

ct(IQ)

crosstalk between the I and Q channels

note 12

30

−−

dB

DC output voltage level for the

I and Q amplifier

−

2.45

−

V

input impedance of the I and Q channels

−

10

−

k

Ω

output impedance of the I and Q channels

−

50

−Ω

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

G

IQ

V

IQ rms

()

V

iRF rms

()

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=