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TDA8920TH Arkusz danych(PDF) 6 Page - NXP Semiconductors |
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TDA8920TH Arkusz danych(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 1998 Dec 01 6 Philips Semiconductors Preliminary specification 2 × 50 W class-D power amplifier TDA8920 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS QUALITY SPECIFICATION Quality according to “SNW-FQ-611-part E”, if this type is used as an audio amplifier. SWITCHING CHARACTERISTICS VDD = ±25 V; Tamb =25 °C; measured in Fig.5; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDD supply voltage −±30 V Vms mode select switch voltage with respect to SGND − 5.5 V Vsc short-circuit voltage of output pins −±30 V IOSM non-repetitive peak output current − 10 A IORM repetitive peak output current − 7.5 A Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tamb operating ambient temperature −40 +85 °C Tvj virtual junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W Rth(j-c) thermal resistance from junction to case 10 K/W SYMBOL PARAMETER MIN. TYP. MAX. UNIT fosc oscillator frequency 400 500 600 kHz VOSC(p-p) voltage at tracking point (peak-to-peak value) − 1.75 − V |
Podobny numer części - TDA8920TH |
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Podobny opis - TDA8920TH |
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