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TEA5570 Arkusz danych(PDF) 6 Page - NXP Semiconductors

Numer części TEA5570
Szczegółowy opis  RF/IF circuit for AM/FM radio
Download  19 Pages
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TEA5570 Arkusz danych(HTML) 6 Page - NXP Semiconductors

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September 1987
6
Philips Semiconductors
Product specification
RF/IF circuit for AM/FM radio
TEA5570
A.C. CHARACTERISTICS
AM performance
VP = 6 V; Tamb = 25 °C; r.f. condition: fi = 1 MHz, m = 0,3, fm = 1 kHz; transfer impedance of the i.f. filter
|Ztr| = v6/I4 = 2,7 kΩ; measured in Fig.10; unless otherwise specified
FM performance
VP = 6 V; Tamb = 25 °C; i.f. condition: fi = 10,7 MHz, ∆f = ± 22,5 kHz, fm = 1 kHz; transfer impedance of the i.f. filter
|Ztr| = v6/i5 = 275 Ω; measured in Fig.10; unless otherwise specified
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
R.F. sensitivity (pin 2)
at Vo = 30 mV
Vi
3,5
5,0
7,0
µV
at S
+ N/N = 6 dB
Vi
1,3
µV
at S
+ N/N = 26 dB
Vi
16
20
µV
at S
+ N/N = 50 dB
Vi
1
mV
Signal handling (THD
≤ 10% at m = 0,8)
Vi
200
−−
mV
A.F. output voltage at Vi = 1 mV
Vo
80
100
125
mV
Total harmonic distortion
at Vi = 100 µV to 100 mV (m = 0,3)
THD
0,5
%
at Vi = 2 mV (m = 0,8)
THD
1,0
2,5
%
at Vi = 200 mV (m = 0,8)
THD
4,0
10
%
I.F. suppression at Vo = 30 mV (note 2)
α
26
35
dB
Oscillator voltage (pin 8; note 3)
at fosc = 1455 kHz
V8-16
120
160
200
mV
Indicator current (pin 12) at Vi = 1 mV
I12
200
230
µV
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
I.F. part
I.F. sensitivity (adjustable; note 4)
Input voltage
at
−3 dB before limiting
Vi
90
110
130
µV
at S + N/N = 26 dB
Vi
6
−µV
at S + N/N = 65 dB
Vi
1
mV
A.F. output voltage at Vi = 1 mV
Vo
80
100
125
mV
Total harmonic distortion at Vi = 1 mV
THD
0,3
%
AM suppression (note 5)
AMS
50
dB


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