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FDS8858CZ Arkusz danych(PDF) 3 Page - Fairchild Semiconductor

Numer części FDS8858CZ
Szczegółowy opis  Dual N & P-Channel PowerTrench짰 MOSFET N-Channel: 30V, 8.6A, 17.0m廓 P-Channel: -30V, -7.3A, 20.5m廓
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8858CZ Arkusz danych(HTML) 3 Page - Fairchild Semiconductor

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©2007 Fairchild Semiconductor Corporation
FDS8858CZ Rev.B
Electrical Characteristics T
J = 25°C unless otherwise noted
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 8.6A
(Note 2)
VGS = 0V, IS = -7.3A
(Note 2)
Q1
Q2
0.8
0.9
1.2
-1.2
V
trr
Reverse Recovery Time
Q1
IF = 8.6A, di/dt = 100A/s
Q2
IF = -7.3A, di/dt = 100A/s
Q1
Q2
25
28
38
42
ns
Qrr
Reverse Recovery Charge
Q1
Q2
19
22
29
33
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300
µs, Duty cycle < 2.0%.
c) 135°C/W when
mounted on a
minimun pad
a) 78°C/W when
mounted on a 0.5 in2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper


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