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FDS8858CZ Arkusz danych(PDF) 3 Page - Fairchild Semiconductor |
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FDS8858CZ Arkusz danych(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page www.fairchildsemi.com 3 ©2007 Fairchild Semiconductor Corporation FDS8858CZ Rev.B Electrical Characteristics T J = 25°C unless otherwise noted Drain-Source Diode Characteristics Symbol Parameter Test Conditions Type Min Typ Max Units VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 8.6A (Note 2) VGS = 0V, IS = -7.3A (Note 2) Q1 Q2 0.8 0.9 1.2 -1.2 V trr Reverse Recovery Time Q1 IF = 8.6A, di/dt = 100A/s Q2 IF = -7.3A, di/dt = 100A/s Q1 Q2 25 28 38 42 ns Qrr Reverse Recovery Charge Q1 Q2 19 22 29 33 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. c) 135°C/W when mounted on a minimun pad a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper |
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