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BC337A Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części BC337A
Szczegółowy opis  NPN Medium Power Transistor
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

BC337A Arkusz danych(HTML) 1 Page - Fairchild Semiconductor

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© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BC337A Rev. 1.0.0
1
September 2007
BC337A
NPN Medium Power Transistor
• This device is designed for general purpose amplifier application at collector currents to 800mA.
• Sourced from process 38.
Absolute Maximum Ratings T
C=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
a=25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Electrical Characteristics T
C=25°C unless otherwise noted
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3.These ratings are based on a maximum junction temperature of 150degrees C.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
60
V
VCES
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
800
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA
60
V
BVCES
Collector-Emitter Cutoff Voltage
IC = 100μA
60
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 100μA
5
V
IEBO
Emitter Cut-off Current
VEB = 5V
10
μA
ICBO
Collector Cut-off Current
VCB = 20V, T = 25 °C
T = 150
°C
0.1
5
μA
hFE
DC Current Gain
VCE = 1V, IC = 100mA
VCE = 1V, IC = 500mA
100
40
400
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 500 mA, IB = 50 mA
0.7
V
VBE(on)
Base-Emitter On Voltage
VCE = 5V, IC = 2mA
1.2
V
1. Collector 2. Base 3. Emitter
TO-92
1


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