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FW349 Arkusz danych(PDF) 2 Page - Sanyo Semicon Device

Numer części FW349
Szczegółowy opis  N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
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Producent  SANYO [Sanyo Semicon Device]
Strona internetowa  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FW349 Arkusz danych(HTML) 2 Page - Sanyo Semicon Device

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FW349
No.8750-2/6
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
45
V
Zero-Gate Voltage Drain Current
IDSS
VDS=45V, VGS=0V
1
µA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
µA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=5A
4.2
7.1
S
RDS(on)1
ID=5A, VGS=10V
28
37
mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=3A, VGS=4V
47
66
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
860
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
105
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
75
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
14
ns
Rise Time
tr
See specified Test Circuit.
64
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
60
ns
Fall Time
tf
See specified Test Circuit.
65
ns
Total Gate Charge
Qg
VDS=24V, VGS=10V, ID=5A
18.1
nC
Gate-to-Source Charge
Qgs
VDS=24V, VGS=10V, ID=5A
2.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=24V, VGS=10V, ID=5A
4.0
nC
Diode Forward Voltage
VSD
IS=5A, VGS=0V
0.83
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--45
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--45V, VGS=0V
--1
µA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
µA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--4.5A
4.5
7.6
S
RDS(on)1
ID=--4.5A, VGS=--10V
47
62
mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--3A, VGS=--4V
76
106
mΩ
Input Capacitance
Ciss
VDS=--20V, f=1MHz
1275
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
150
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
110
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
14
ns
Rise Time
tr
See specified Test Circuit.
50
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
123
ns
Fall Time
tf
See specified Test Circuit.
75
ns
Total Gate Charge
Qg
VDS=--24V, VGS=--10V, ID=--4.5A
26
nC
Gate-to-Source Charge
Qgs
VDS=--24V, VGS=--10V, ID=--4.5A
2.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--24V, VGS=--10V, ID=--4.5A
5.7
nC
Diode Forward Voltage
VSD
IS=--4.5A, VGS=0V
--0.86
--1.2
V
Package Dimensions
Electrical Connection
unit : mm (typ)
7005-003
14
5
8
5.0
0.595
1.27
0.2
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
87
6
5
12
3
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
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