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FW349 Arkusz danych(PDF) 2 Page - Sanyo Semicon Device |
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FW349 Arkusz danych(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page FW349 No.8750-2/6 Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 45 V Zero-Gate Voltage Drain Current IDSS VDS=45V, VGS=0V 1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance yfs VDS=10V, ID=5A 4.2 7.1 S RDS(on)1 ID=5A, VGS=10V 28 37 mΩ Static Drain-to-Source On-State Resistance RDS(on)2 ID=3A, VGS=4V 47 66 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 860 pF Output Capacitance Coss VDS=20V, f=1MHz 105 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 75 pF Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr See specified Test Circuit. 64 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 60 ns Fall Time tf See specified Test Circuit. 65 ns Total Gate Charge Qg VDS=24V, VGS=10V, ID=5A 18.1 nC Gate-to-Source Charge Qgs VDS=24V, VGS=10V, ID=5A 2.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=24V, VGS=10V, ID=5A 4.0 nC Diode Forward Voltage VSD IS=5A, VGS=0V 0.83 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --45 V Zero-Gate Voltage Drain Current IDSS VDS=--45V, VGS=0V --1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V Forward Transfer Admittance yfs VDS=--10V, ID=--4.5A 4.5 7.6 S RDS(on)1 ID=--4.5A, VGS=--10V 47 62 mΩ Static Drain-to-Source On-State Resistance RDS(on)2 ID=--3A, VGS=--4V 76 106 mΩ Input Capacitance Ciss VDS=--20V, f=1MHz 1275 pF Output Capacitance Coss VDS=--20V, f=1MHz 150 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 110 pF Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr See specified Test Circuit. 50 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 123 ns Fall Time tf See specified Test Circuit. 75 ns Total Gate Charge Qg VDS=--24V, VGS=--10V, ID=--4.5A 26 nC Gate-to-Source Charge Qgs VDS=--24V, VGS=--10V, ID=--4.5A 2.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=--24V, VGS=--10V, ID=--4.5A 5.7 nC Diode Forward Voltage VSD IS=--4.5A, VGS=0V --0.86 --1.2 V Package Dimensions Electrical Connection unit : mm (typ) 7005-003 14 5 8 5.0 0.595 1.27 0.2 0.43 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 87 6 5 12 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view |
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