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BD249C Arkusz danych(PDF) 2 Page - Power Innovations Ltd |
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BD249C Arkusz danych(HTML) 2 Page - Power Innovations Ltd |
2 / 6 page BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS 2 JUNE 1973 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA (see Note 5) IB = 0 BD249 BD249A BD249B BD249C 45 60 80 100 V ICES Collector-emitter cut-off current VCE = 55 V VCE = 70 V VCE = 90 V VCE = 115 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 BD249 BD249A BD249B BD249C 0.7 0.7 0.7 0.7 mA ICEO Collector cut-off current VCE = 30 V VCE = 60 V IB = 0 IB = 0 BD249/249A BD249B/249C 1 1 mA IEBO Emitter cut-off current VEB = 5 V IC = 0 1 mA hFE Forward current transfer ratio VCE = 4 V VCE = 4 V VCE = 4 V IC = 1.5 A IC = 15 A IC = 25 A (see Notes 5 and 6) 25 10 5 VCE(sat) Collector-emitter saturation voltage IB = 1.5 A IB = 5 A IC = 15 A IC = 25 A (see Notes 5 and 6) 1.8 4 V VBE Base-emitter voltage VCE = 4 V VCE = 4 V IC = 15 A IC = 25 A (see Notes 5 and 6) 2 4 V hfe Small signal forward current transfer ratio VCE = 10 V IC = 1 A f = 1 kHz 25 |h fe| Small signal forward current transfer ratio VCE = 10 V IC = 1 A f = 1 MHz 3 thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1 °C/W RθJA Junction to free air thermal resistance 42 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = 5 A VBE(off) = -5 V IB(on) = 0.5 A RL = 5 Ω IB(off) = -0.5 A tp = 20 µs, dc ≤ 2% 0.3 µs toff Turn-off time 0.9 µs |
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