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BDW74 Arkusz danych(PDF) 2 Page - Power Innovations Ltd |
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BDW74 Arkusz danych(HTML) 2 Page - Power Innovations Ltd |
2 / 6 page BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS 2 AUGUST 1978 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = -30 mA IB = 0 (see Note 5) BDW74 BDW74A BDW74B BDW74C BDW74D -45 -60 -80 -100 -120 V ICEO Collector-emitter cut-off current VCE = -30 V VCE = -30 V VCE = -40 V VCE = -50 V VCE = -60 V IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 BDW74 BDW74A BDW74B BDW74C BDW74D -0.5 -0.5 -0.5 -0.5 -0.5 mA ICBO Collector cut-off current VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V VCB = -120 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V VCB = -120 V IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 TC = 150°C TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW74 BDW74A BDW74B BDW74C BDW74D BDW74 BDW74A BDW74B BDW74C BDW74D -0.2 -0.2 -0.2 -0.2 -0.2 -5 -5 -5 -5 -5 mA IEBO Emitter cut-off current VEB = -5 V IC = 0 -2 mA hFE Forward current transfer ratio VCE = -3 V VCE = -3 V IC = -3 A IC = -8 A (see Notes 5 and 6) 750 100 20000 VBE(on) Base-emitter voltage VCE = -3 V IC = -3 A (see Notes 5 and 6) -2.5 V VCE(sat) Collector-emitter saturation voltage IB = -12 mA IB = -80 mA IC = -3 A IC = -8 A (see Notes 5 and 6) -2.5 -4 V VEC Parallel diode forward voltage IE = -8 A IB = 0 -3.5 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT ton Turn-on time IC = -3 A VBE(off) = 3.5 V IB(on) = -12 mA RL = 10 Ω IB(off) = 12 mA tp = 20 µs, dc ≤ 2% 1 µs toff Turn-off time 5 µs |
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