SI3481DV datasheet(2/6 Pages) VISHAY

Numer części	SI3481DV

Szczegółowy opis	P-Channel 30-V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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Document Number: 72105

S-60422-Rev. C, 20-Mar-06

Vishay Siliconix

Si3481DV

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C unless noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1.0

- 3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 30 V, VGS = 0 V

- 1

µA

VDS = - 30 V, VGS = 0 V, TJ = 85 °C

- 5

On-State Drain Currenta

ID(on)

VDS ≤ - 5 V, VGS = - 10 V

- 20

A

Drain-Source On-State Resistancea

rDS(on)

VGS = - 10 V, ID = - 5.3 A

0.038

0.048

Ω

VGS = - 4.5 V, ID = - 2 A

0.063

0.079

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 5.3 A

12

S

Diode Forward Voltagea

VSD

IS = - 1.7 A, VGS = 0 V

- 0.85

- 1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = - 15 V, VGS = - 10 V, ID = - 5.3 A

15.5

25

nC

Gate-Source Charge

Qgs

2.5

Gate-Drain Charge

Qgd

4.3

Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 15 Ω

ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω

11

17

ns

Rise Time

tr

14

22

Turn-Off Delay Time

td(off)

60

90

Fall Time

tf

35

55

Source-Drain Reverse Recovery Time

trr

IF = - 1.7 A, di/dt = 100 A/µs

30

60

Output Characteristics

0

5

10

15

20

0

1234

5

VGS = 10 thru 5 V

4 V

VDS - Drain-to-Source Voltage (V)

3 V

Transfer Characteristics

0

4

8

12

16

20

0

1234

5

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Podobny numer części - SI3481DV

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI3481DV	67Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-04
Vishay Siliconix	SI3481DV-T1-E3	67Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-04
VBsemi Electronics Co.,...	SI3481DV-T1-GE3	451Kb / 9P	P-Channel 30-V (D-S) MOSFET

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Podobny opis - SI3481DV

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
Vishay Siliconix	SI4835BDY	90Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. D, 25-Oct-0
Anachip Corp	AF4407	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
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	SI2303ADS	39Kb / 4P	P-Channel, 30-V (D-S) MOSFET Rev. B, 29-Apr-02
	SI3481DV	67Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-04
DinTek Semiconductor Co...	DTM4415	286Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
	SI7121DN	552Kb / 13P	P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08
	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
	SI7129DN	566Kb / 13P	P-Channel 30 V (D-S) MOSFET Rev. B, 06-Sep-10

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