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TIP160 Arkusz danych(PDF) 2 Page - Power Innovations Ltd |
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TIP160 Arkusz danych(HTML) 2 Page - Power Innovations Ltd |
2 / 7 page TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS 2 JUNE 1973 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ICEO Collector-emitter cut-off current VCE = 320 V VCE = 350 V VCE = 380 V IB = 0 IB = 0 IB = 0 TIP160 TIP161 TIP162 1 mA ICEX(sus) Collector-emitter sustaining current VCLAMP = V(BR)CEO 7 A IEBO Emitter cut-off current VEB = 5 V IC = 0 100 mA hFE Forward current transfer ratio VCE = 2.2 V IC = 4 A (see Notes 5 and 6) 200 VCE(sat) Collector-emitter saturation voltage IB = 0.1A IB = 1 A IC = 6.5 A IC = 10 A (see Notes 5 and 6) 2.8 2.9 V VBE(sat) Base-emitter saturation voltage IB = 0.1A IC = 6.5 A (see Notes 5 and 6) 2.2 V VEC Parallel diode forward voltage IE = 10 A IB = 0 (see Notes 5 and 6) 3.5 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1 °C/W RθJA Junction to free air thermal resistance 41.7 °C/W CθC Thermal capacitance of case 1.4 J/°C resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT td Delay time IC = 6.5 A VBE(off) = -5 V IB(on) = 100 mA RL = 5 Ω IB(off) = -100 mA 40 ns tr Rise time 1.5 µs ts Storage time 2.2 µs tf Fall time 2.6 µs |
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