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TIP152 Arkusz danych(PDF) 2 Page - Power Innovations Ltd |
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TIP152 Arkusz danych(HTML) 2 Page - Power Innovations Ltd |
2 / 7 page TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS 2 JUNE 1973 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-base breakdown voltage IC = 1 mA IE = 0 TIP150 TIP151 TIP152 300 350 400 V V(BR)CEO Collector-emitter breakdown voltage IC = 10 mA (see Note 4) IB = 0 TIP150 TIP151 TIP152 300 350 400 V ICEO Collector-emitter cut-off current VCE = 300 V VCE = 350 V VCE = 400 V IB = 0 IB = 0 IB = 0 TIP150 TIP151 TIP152 250 250 250 µA ICEX(sus) Collector-emitter sustaining current VCLAMP = V(BR)CEO 7 A IEBO Emitter cut-off current VEB = 8 V IC = 0 15 mA hFE Forward current transfer ratio VCE = 5 V VCE = 5 V VCE = 5 V IC = 2.5 A IC = 5 A IC = 7 A (see Notes 4 and 5) 150 50 15 VCE(sat) Collector-emitter saturation voltage IB = 10 mA IB = 100 mA IB = 250 mA IC = 1 A IC = 2 A IC = 5 A (see Notes 4 and 5) 1.5 1.5 2 V VBE(sat) Base-emitter saturation voltage IB = 100 mA IB = 250 mA IC = 2 A IC = 5 A (see Notes 4 and 5) 2.2 2.3 V VEC Parallel diode forward voltage IE = 7 A IB = 0 (see Notes 4 and 5) 3.5 V hfe Small signal forward current transfer ratio VCE = 5 V IC = 0.5 A f = 1 kHz 200 |h fe| Small signal forward current transfer ratio VCE = 5 V IC = 0.5 A f = 1 MHz 10 Cob Output capacitance VCB = 10 V IE = 0 f = 1 MHz 100 pF thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W CθC Thermal capacitance of case 0.9 J/°C inductive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT tsv Voltage storage time IC = 5 A V(clamp) = V(BR)CEO IB(on) = 250 mA RBE = 47 Ω 3.9 µs tsi Current storage time 4.7 µs trv Voltage transition time 1.2 µs tti Current transition time 1.2 µs txo Cross-over time 2.0 µs |
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