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TIP2955 Arkusz danych(PDF) 2 Page - Power Innovations Ltd

Numer części TIP2955
Szczegółowy opis  PNP SILICON POWER TRANSISTOR
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Producent  POINN [Power Innovations Ltd]
Strona internetowa  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIP2955 Arkusz danych(HTML) 2 Page - Power Innovations Ltd

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TIP2955
PNP SILICON POWER TRANSISTOR
2
JANUARY 1972 - REVISED MARCH 1997
PRODUCT
INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = -30 mA
IB = 0
(see Note 5)
-60
V
ICEO
Collector cut-off
current
VCE = -30 V
IB = 0
-0.7
mA
ICEV
Voltage between
base and emitter
VCE = -100 V
VBE = 1.5 V
-5
mA
IEBO
Emitter cut-off
current
VEB =
-7 V
IC = 0
-5
mA
hFE
Forward current
transfer ratio
VCE =
-4 V
VCE =
-4 V
IC =
-4 A
IC = -10 A
(see Notes 5 and 6)
20
5
70
VCE(sat)
Collector-emitter
saturation voltage
IB =
-0.4 A
IB =
-3.3 A
IC =
-4 A
IC = -10 A
(see Notes 5 and 6)
-1.1
-3
V
VBE
Base-emitter
voltage
VCE =
-4 V
IC =
-4 A
(see Notes 5 and 6)
-1.8
V
hfe
Small signal forward
current transfer ratio
VCE = -10 V
IC = -0.5 A
f = 1 kHz
20
|h
fe|
Small signal forward
current transfer ratio
VCE = -10 V
IC = -0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.39
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = -6 A
VBE(off) = 4 V
IB(on) = -0.6 A
RL = 5 Ω
IB(off) = 0.6 A
tp = 20 µs, dc ≤ 2%
0.4
µs
toff
Turn-off time
0.7
µs


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