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TIP29F Arkusz danych(PDF) 1 Page - Power Innovations Ltd |
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TIP29F Arkusz danych(HTML) 1 Page - Power Innovations Ltd |
1 / 6 page TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS PRODUCT INFORMATION 1 JULY 1968 - REVISED MARCH 1997 Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. q 30 W at 25°C Case Temperature q 1 A Continuous Collector Current q 3 A Peak Collector Current q Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) TIP29D TIP29E TIP29F VCBO 160 180 200 V Collector-emitter voltage (IB = 0) TIP29D TIP29E TIP29F VCEO 120 140 160 V Emitter-base voltage VEBO 5 V Continuous collector current IC 1 A Peak collector current (see Note 1) ICM 3 A Continuous base current IB 0.4 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 30 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W Unclamped inductive load energy (see Note 4) ½LIC 2 32 mJ Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Lead temperature 3.2 mm from case for 10 seconds TL 250 °C |
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