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TIP3055 Arkusz danych(PDF) 1 Page - Power Innovations Ltd

Numer części TIP3055
Szczegółowy opis  NPN SILICON POWER TRANSISTOR
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Producent  POINN [Power Innovations Ltd]
Strona internetowa  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIP3055 Arkusz danych(HTML) 1 Page - Power Innovations Ltd

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TIP3055
NPN SILICON POWER TRANSISTOR
PRODUCT
INFORMATION
1
DECEMBER 1970 - REVISED MARCH 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with the
TIP2955 Series
q
90 W at 25°C Case Temperature
q
15 A Continuous Collector Current
q
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies when the base-emitter resistance RBE = 100 Ω.
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 10 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
VCBO
100
V
Collector-emitter voltage (IB = 0) (see Note 1)
VCER
70
V
Emitter-base voltage
VEBO
7
V
Continuous collector current
IC
15
A
Continuous base current
IB
7
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
90
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
Unclamped inductive load energy (see Note 4)
½LIC
2
62.5
mJ
Operating junction temperature range
Tj
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
260
°C


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