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TIP31D Arkusz danych(PDF) 1 Page - Power Innovations Ltd

Numer części TIP31D
Szczegółowy opis  NPN SILICON POWER TRANSISTORS
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Producent  POINN [Power Innovations Ltd]
Strona internetowa  http://www.bourns.com
Logo POINN - Power Innovations Ltd

TIP31D Arkusz danych(HTML) 1 Page - Power Innovations Ltd

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TIP31D, TIP31E, TIP31F
NPN SILICON POWER TRANSISTORS
PRODUCT
INFORMATION
1
AUGUST 1978 - REVISED MARCH 1997
Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
40 W at 25°C Case Temperature
q
3 A Continuous Collector Current
q
5 A Peak Collector Current
q
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
TIP31D
TIP31E
TIP31F
VCBO
160
180
200
V
Collector-emitter voltage (IB = 0)
TIP31D
TIP31E
TIP31F
VCEO
120
140
160
V
Emitter-base voltage
VEBO
5
V
Continuous collector current
IC
3
A
Peak collector current (see Note 1)
ICM
5
A
Continuous base current
IB
1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
40
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
2
W
Unclamped inductive load energy (see Note 4)
½LIC
2
32
mJ
Operating junction temperature range
Tj
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
250
°C


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