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ES2J Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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ES2J Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page Dimensions in inches and (millimeters) Version: A06 ES2A - ES2J 2.0 AMPS. Surface Mount Super Fast Rectifiers SMB/DO-214AA .083(2.10) .077(1.95) .012(.31) .006(.15) .012(.31) .006(.15) .008(.20) .004(.10) .056(1.41) .035(0.90) .147(3.73) .137(3.48) .187(4.75) .167(4.25) .103(2.61) .078(1.99) .209(5.30) .201(5.10) Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 260 OC/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Mechanical Data Cases: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packing: 12mm tape per EIA STD RS-481 Weight: 0.093 gram Maximum Ratings and Electrical Characteristics Rating at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol ES 2A ES 2B ES 2C ES 2D ES 2F ES 2G ES 2H ES 2J Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V Maximum Average Forward Rectified Current See Fig. 1 I(AV) 2.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 50 A Maximum Instantaneous Forward Voltage @ 2.0A VF 0.95 1.3 1.7 V Maximum DC Reverse Current @TA =25 oC at Rated DC Blocking Voltage @ TA=100 oC IR 10 350 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 35 nS Typical Junction Capacitance ( Note 2 ) Cj 25 20 pF Maximum Thermal Resistance (Note 3) RθJA RθJL 75 20 oC /W Operating Temperature Range TJ -55 to +150 oC Storage Temperature Range TSTG -55 to +150 oC Notes: 1. Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied V R=4.0 Volts 3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas |
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