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FDD8453LZ Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FDD8453LZ Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page www.fairchildsemi.com 4 ©2007 Fairchild Semiconductor Corporation FDD8453LZ Rev.C Figure 7. 0 1020 3040 50 0 2 4 6 8 10 ID = 15A VDD = 25V VDD = 15V Qg, GATE CHARGE (nC) VDD = 20V Gate Charge Characteristics Figure 8. 0.1 1 10 100 1000 4000 40 f = 1MHz VGS = 0V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs Drain to Source Voltage Figure9. 0.01 0.1 1 10 100 1000 1 10 20 TJ = 25oC TJ = 125oC t AV, TIME IN AVALANCHE (ms) Unclamped Inductive Switching Capability Figure 10. 0 5 10 15 20 25 30 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 VGS = 0V TJ = 25oC TJ = 150oC VGS, GATE TO SOURCE VOLTAGE (V) Gate Leakage Current vs Gate to Source Voltage Figure 11. Maximum Continuous Drain Current vs Ambient Temperature 25 50 75 100 125 150 0 20 40 60 80 Limited by Package RθJC = 1.9 o C/W VGS = 4.5V VGS = 10V T C , CASE TEMPERATURE ( o C ) Figure 12. 0.1 1 10 100 0.1 1 10 100 DC 10ms 1ms 100us THIS AREA IS LIMITED BY rds(on) 200 SINGLE PULSE TJ = MAX RATED RθJC = 1.9 oC/W TC = 25oC VDS, DRAIN to SOURCE VOLTAGE (V) Forward Bias Safe Operating Area Typical Characteristics T J = 25°C unless otherwise noted |
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