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BCP54 Arkusz danych(PDF) 2 Page - Diotec Semiconductor

Numer części BCP54
Szczegółowy opis  Surface Mount General Purpose Si-Epi-Planar Transistors
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Producent  DIOTEC [Diotec Semiconductor]
Strona internetowa  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BCP54 Arkusz danych(HTML) 2 Page - Diotec Semiconductor

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BCP54 ... BCP56
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
VCB = 30 V, Tj = 125°C, (E open)
ICB0
ICB0
100 nA
10 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 5 V, (C open)
IEB0
100 nA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
130 MHz
DC current gain ratio of the complementary pairs
Verhältnis der Stromverstärkungen komplementärer Paare
l IC l = 150 mA, l VCE l = 2 V
hFE1/hFE2
––
1.6
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 93 K/W 1)
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
RthS
< 27 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCP51 ... BCP53
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150
100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1


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