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IRF7831PBF Arkusz danych(PDF) 1 Page - International Rectifier

Numer części IRF7831PBF
Szczegółowy opis  HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6m廓@VGS = 10V , Qg(typ.) = 40nC )
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF7831PBF Arkusz danych(HTML) 1 Page - International Rectifier

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www.irf.com
1
6/30/05
IRF7831PbF
HEXFET® Power MOSFET
Notes
 through „ are on page 10
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
l Lead-Free
Applications
l High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
VDSS
RDS(on) max
Qg (typ.)
30V 3.6m
:@VGS = 10V 40nC
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
f
W
PD @TA = 70°C
Power Dissipation
f
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
20
°C/W
RθJA
Junction-to-Ambient
f
–––
50
-55 to + 150
2.5
0.02
1.6
Max.
21
17
170
± 12
30
PD - 95134B


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