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TIP32C Arkusz danych(PDF) 1 Page - Diotec Semiconductor

Numer części TIP32C
Szczegółowy opis  General Purpose Silicon Power Transistors
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Producent  DIOTEC [Diotec Semiconductor]
Strona internetowa  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

TIP32C Arkusz danych(HTML) 1 Page - Diotec Semiconductor

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TIP32 ... TIP32C
TIP32 ... TIP32C
PNP
General Purpose Silicon Power Transistors
Silizium Leistungs-Transistoren für universellen Einsatz
PNP
Version 2006-07-18
Dimensions - Maße [mm]
1 = B
2/4 = C
3 = E
Max. power dissipation with cooling
Max. Verlustleistung mit Kühlung
40 W
Collector current
Kollektorstrom
3 A
Plastic case
Kunststoffgehäuse
TO-220AB
Weight approx.
Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
TIP32
TIP32A
TIP32B
TIP32C
Collector-Emitter-voltage
B open
- VCEO
40 V
60 V
80 V
100 V
Collector-Emitter-voltage
E open
- VCES
40 V
60 V
80 V
100 V
Emitter-Base-voltage
C open
- VEBO
5 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
TA = 25°C
TC = 25°C
Ptot
Ptot
2 W 1)
40 W
Collector current – Kollektorstrom (dc)
- IC
3 A
Peak Collector current – Kollektor-Spitzenstrom
- ICM
5 A
Base current – Basisstrom
- IB
1 A
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 4 V, - IC = 1 A
- VCE = 4 V, - IC = 3 A
hFE
hFE
25
10
50
Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 3 A, - IB = 375 mA
- VCEsat
1.2 V
Base-Emitter voltage – Basis-Emitter-Spannung 2)
- VCE = 4 V, - IC = 3 A
- VBE
1.8 V
1
Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
3.8
2.54
0.9
1.5
10±0.2
4
3
2
1
Type
Typ


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