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TIP31C Arkusz danych(PDF) 1 Page - Diotec Semiconductor |
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1 / 2 page TIP31 ... TIP31C TIP31 ... TIP31C NPN General Purpose Silicon Power Transistors Silizium Leistungs-Transistoren für universellen Einsatz NPN Version 2006-07-12 Dimensions - Maße [mm] 1 = B 2/4 = C 3 = E Max. power dissipation with cooling Max. Verlustleistung mit Kühlung 40 W Collector current Kollektorstrom 3 A Plastic case Kunststoffgehäuse TO-220AB Weight approx. Gewicht ca. 2.2 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) TIP31 TIP31A TIP31B TIP31C Collector-Emitter-voltage B open VCEO 40 V 60 V 80 V 100 V Collector-Emitter-voltage E open VCES 40 V 60 V 80 V 100 V Emitter-Base-voltage C open VEBO 5 V Power dissipation – Verlustleistung without cooling – ohne Kühlung with cooling – mit Kühlung TA = 25°C TC = 25°C Ptot Ptot 2 W 1) 40 W Collector current – Kollektorstrom (dc) IC 3 A Peak Collector current – Kollektor-Spitzenstrom ICM 5 A Base current – Basisstrom (dc) IB 1 A Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A hFE hFE 25 10 – – – 50 Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2) IC = 3 A, IB = 375 mA VCEsat – – 1.2 V Base-Emitter voltage – Basis-Emitter-Spannung 2) VCE = 4 V, IC = 3 A VBE – – 1.8 V 1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 3.8 2.54 0.9 1.5 10±0.2 4 3 2 1 Type Typ |
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