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TP2635N3-G Arkusz danych(PDF) 1 Page - Supertex, Inc |
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TP2635N3-G Arkusz danych(HTML) 1 Page - Supertex, Inc |
1 / 5 page 1 TP2635/TP2640 Features Low threshold — -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches ► ► ► ► ► ► ► ► ► ► ► ► ► ► ► General Description These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Options BV DSS/BVDGS R DS(ON) (max) V GS(th) (max) I D(ON) (min) SO-8 TO-92 TP2635 - TP2635N3 -350V 15Ω -2.0V -0.7A - TP2635N3-G TP2640 TP2640LG TP2640N3 -400V 15Ω -2.0V -0.7A TP2640LG-G TP2640N3-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Value Drain to source voltage BV DSS Drain to gate voltage BV DGS Gate to source voltage ±20V Operating and storage temperature -55°C to +150°C Soldering temperature1 +300°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Note 1. Distance of 1.6mm from case for 10 seconds. Pin Configurations S G D TO-92 1 2 3 4 8 7 6 5 SO-8 (top view) NC NC S G D D D D P- Channel Enhancement-Mode Vertical DMOS FETs |
Podobny numer części - TP2635N3-G |
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Podobny opis - TP2635N3-G |
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