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ADIS16355 Arkusz danych(PDF) 4 Page - Analog Devices |
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ADIS16355 Arkusz danych(HTML) 4 Page - Analog Devices |
4 / 28 page ADIS16355 Rev. PrG | Page 4 of 28 Parameter Conditions Min Typ Max Unit TEMPERATURE SENSOR Output at 25°C 0 LSB Scale Factor 6.88 LSB/°C ADC INPUT Resolution 12 Bits Integral Nonlinearity ±2 LSB Differential Nonlinearity ±1 LSB Offset Error ±4 LSB Gain Error ±2 LSB Input Range 0 2.5 V Input Capacitance During acquisition 20 pF DAC OUTPUT 5 kΩ/100 pF to GND Resolution 12 Bits Relative Accuracy For Code 101 to Code 4095 ±4 LSB Differential Nonlinearity ±1 LSB Offset Error ±5 mV Gain Error ±0.5 % Output Range 0 to 2.5 V Output Impedance 2 Ω Output Settling Time 10 μs LOGIC INPUTS Input High Voltage, VINH 2.0 V Input Low Voltage, VINL 0.8 V For −CS signal when used to wake up from sleep mode 0.55 V Logic 1 Input Current, IINH VIH = 3.3 V ±0.2 ±10 μA Logic 0 Input Current, IINL VIL = 0 V All except RST −40 −60 μA RST −1 mA Input Capacitance, CIN 10 pF DIGITAL OUTPUTS Output High Voltage, VOH ISOURCE = 1.6 mA 2.4 V Output Low Voltage, VOL ISINK = 1.6 mA 0.4 V SLEEP TIMER Timeout Period1 0.5 128 Sec FLASH MEMORY Endurance2 10,000 Cycles Data Retention3 TJ = 85C 20 Years CONVERSION RATE Maximum Sample Rate SMPL_PRD = 0x01 819.2 SPS Minimum Sample Rate SPML_PRD = 0xFF 0.413 SPS START-UP TIME4 Initial Power Up 150 ms Sleep Mode Recovery 3 ms POWER SUPPLY Operating Voltage Range, VCC 4.75 5.0 5.25 V Power Supply Current Normal mode at 25°C 33 mA Fast mode at 25°C 57 mA Sleep mode at 25°C 500 μA 1 Guaranteed by design 2 Endurance is qualified as per JEDEC Standard 22 Method A117 and measured at −40°C, +25°C, +85°C, and +125°C. 3 Retention lifetime equivalent at junction temperature (TJ) 85°C as per JEDEC Standard 22 Method A117. Retention lifetime decreases with junction temperature. 4 This is defined as the time from wake-up to the first conversion. This time does not include sensor settling time, which is dependent on the filter settings |
Podobny numer części - ADIS16355 |
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Podobny opis - ADIS16355 |
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