SI4963BDY datasheet(4/5 Pages) VISHAY

Numer części	SI4963BDY

Szczegółowy opis	Dual P-Channel 2.5-V (G-S) MOSFET

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Si4963BDY

Vishay Siliconix

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Document Number: 72753

S-40235—Rev. A, 16-Feb-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

−0.2

−0.1

0.0

0.1

0.2

0.3

0.4

0.5

−50

−25

0

25

50

75

100

125

150

Threshold Voltage

TJ − Temperature (_C)

ID = 250 mA

0

15

30

5

10

Single Pulse Power

Time (sec)

25

10−3

10−2

1

10

600

10−1

10−4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 91_C/W

3. TJM − TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

1

100

600

10

10−1

10−2

20

Safe Operating Area

VDS − Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

TA = 25_C

Single Pulse

P(t) = 10

dc

0.1

IDM Limited

ID(on)

Limited

rDS(on) Limited

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

Podobny numer części - SI4963BDY

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI4963BDY	163Kb / 8P	Dual P-Channel 2.5-V (G-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI4963BDY-T1-E3	1Mb / 8P	Dual P-Channel 20V (D-S) MOSFET
Vishay Siliconix	SI4963BDY	163Kb / 8P	Dual P-Channel 2.5-V (G-S) MOSFET 01-Jan-2022

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Podobny opis - SI4963BDY

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