2N3772 datasheet(1/3 Pages) TEL

Numer części	2N3772

Szczegółowy opis	NPN SILICON PLANAR POWER TRANSISTOR

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NPN SILICON PLANAR POWER TRANSISTOR

2N3772

TO-3

Metal Can Package

Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications.

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

Collector Base Voltage

VCBO

Collector Emitter Voltage

VCEO

Collector Emitter Voltage

VCEX

Emitter Base Voltage

VEBO

Collector Current Continuous

IC

Peak

Base Current Continuous

IB

Peak

Power Dissipation @ Tc=25ºC

PD

Derate Above 25ºC

Operating And Storage Junction

Tj, Tstg

Temperature Range

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNITS

Collector Emitter Sustaing Voltage

VCEO (sus)*

IC=0.2A, IB=0

60

V

Collector Emitter Sustaing Voltage

VCEX (sus)

IC=0.2A, RBE=100Ω,VEB=(off)=1.5V

80

V

Collector Emitter Sustaing Voltage

VCER (sus)

IC=0.2A, RBE=100Ω,

70

V

Collector Cut Off Current

ICEO

VCE=50V, IB=0

10

mA

Collector Cut Off Current

ICEV

VCE=100V, VEB(off)=1.5V

5.0

mA

Tc=150ºC

VCE=45V, VEB(off)=1.5V

10

Collector Cut Off Current

ICBO

VCB=100V, IE=0

5.0

mA

Emitter Cut Off Current

IEBO

VBE=7V, IC=0

5.0

mA

DC Current Gain

hFE*

IC=10A, VCE=4V

15

60

IC=20A, VCE=4V

5

Collector Emitter Saturation Voltage

VCE(sat)

IC=10A, IB=1A

1.4

V

IC=20A, IB=4A

4.0

Base Emitter On Voltage

VBE(on)

IC=10A, VCE=4V

2.2

V

W/ºC

ºC

ºC/W

UNITS

V

A

W

100

60

80

7

20

30

5

15

150

0.855

- 65 to +200

0.170

Transys

Electronics

LI M ITE D

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