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FDD6N50F Arkusz danych(PDF) 3 Page - Fairchild Semiconductor |
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FDD6N50F Arkusz danych(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page FDD6N50F / FDU6N50F Rev. A www.fairchildsemi.com 3 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 0.1 1 10 0.1 1 10 20 0.04 *Notes: 1. 250μs Pulse Test 2. TC = 25 oC VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V VDS,Drain-Source Voltage[V] 28 56789 10 1 10 150 oC *Notes: 1. VDS = 20V 2. 250μs Pulse Test 25 oC VGS,Gate-Source Voltage[V] 20 0.0 0.5 1.0 1.5 2.0 0.1 1 10 100 *Notes: 1. V GS = 0V 2. 250μs Pulse Test 150 oC V SD, Body Diode Forward Voltage [V] 25 oC 04 8 12 16 0.6 1.2 1.8 2.4 *Note: TJ = 25 oC VGS = 20V VGS = 10V ID, Drain Current [A] 0.1 1 10 0 300 600 900 1200 1500 Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz Crss VDS, Drain-Source Voltage [V] 30 04 8 12 16 0 2 4 6 8 10 *Note: ID = 6A VDS = 100V VDS = 250V VDS = 400V Qg, Total Gate Charge [nC] |
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