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TPCF8001 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TPCF8001 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCF8001 2007-01-16 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1mA 1.3 ⎯ 2.5 V VGS = 4.5 V, ID = 3.5 A ⎯ 24 31 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3.5 A ⎯ 19 23 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 3.5 A 4 8 ⎯ S Input capacitance Ciss ⎯ 1270 ⎯ Reverse transfer capacitance Crss ⎯ 150 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 190 ⎯ pF Rise time tr ⎯ 3.8 ⎯ Turn-on time ton ⎯ 9.4 ⎯ Fall time tf ⎯ 8.4 ⎯ Switching time Turn-off time toff Duty <= 1%, tw = 10 μs ⎯ 40 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 25.4 ⎯ Gate-source charge 1 Qgs1 ⎯ 3.6 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− 24 V, VGS = 10 V, ID = 7.0 A ⎯ 6.2 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 28 A Forward voltage (diode) VDSF IDR = 7.0 A, VGS = 0 V ⎯ ⎯ -1.2 V VDD ∼− 15 V 0V VGS 10 V ID = 3.5 A VOUT |
Podobny numer części - TPCF8001 |
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Podobny opis - TPCF8001 |
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