TPCM8001-H datasheet(3/7 Pages) TOSHIBA

Numer części	TPCM8001-H

Szczegółowy opis	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPCM8001-H

2006-11-16

3

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

μA

Drain cutoff current

IDSS

VDS = 30 V, VGS = 0 V

⎯

10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

15

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.1

⎯

2.3

V

VGS = 4.5 V, ID = 10 A

⎯

10

14

Drain-source ON-resistance

RDS (ON)

VGS = 10 V, ID = 10 A

⎯

7

9.5

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 10 A

18

36

⎯

S

Input capacitance

Ciss

⎯

1130

⎯

Reverse transfer capacitance

Crss

⎯

120

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

480

⎯

pF

Rise time

tr

⎯

2.5

⎯

Turn-on time

ton

⎯

9

⎯

Fall time

tf

⎯

3

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

19

⎯

ns

VDD ∼− 24 V, VGS = 10 V, ID = 20 A

⎯

19

⎯

Total gate charge

(gate-source plus gate-drain)

Qg

VDD ∼− 24 V, VGS = 5 V, ID = 20 A

⎯

11

⎯

Gate-source charge 1

Qgs1

⎯

3.9

⎯

Gate-drain (“Miller”) charge

Qgd

⎯

4.0

⎯

Gate switch charge

QSW

VDD ∼− 24 V, VGS = 10 V, ID = 20 A

⎯

6.0

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP

⎯

60

A

Forward voltage (diode)

VDSF

IDR = 20 A, VGS = 0 V

⎯

−1.2

V

VDD ∼− 15 V

0 V

VGS

10 V

ID = 10A

VOUT

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