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TPCP8H02 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części TPCP8H02
Szczegółowy opis  TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCP8H02 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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TPCP8H02
2006-11-13
2
Common Absolute Maximum Rating (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Storage temperature range
Tstg
−55 to 150
°C
Marking (Note 4)
Note 4: The mark ” ” on the lower left of the marking indicates Pin 1.
*
Weekly code (three digits)
Electrical Characteristics (Ta = 25°C)
Transistor
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
30
V
hFE (1)
VCE = 2 V, IC = 0.3 A
250
400
DC current gain
hFE (2)
VCE = 2 V, IC = 1.0 A
120
Collector-emitter saturation voltage
VCE (sat)
IC = 1.0 A, IB = 33 mA
140
mV
Base-emitter saturation voltage
VBE (sat)
IC = 1.0 A, IB = 33 mA
1.1
V
Collector output capacitance
Cob
VCB = 10V, IE = 0, f=1MHz
18
pF
Rise time
tr
40
Storage time
tstg
320
Switching time
Fall time
tf
See Figure 1 circuit diagram.
VCC ≒ 12 V, RL = 12 Ω
IB1 = -IB2 = 33 mA
25
ns
8H02
*
Type
Lot No.
(Weekly code)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(Last digit of the calendar year)
IB2
IB1
20
μs
Output
Input
IB2
IB1
VCC
Duty cycle
< 1%
Figure 1 Switching Time Test Circuit & Timing Chart


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