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TPCS8210 Arkusz danych(PDF) 5 Page - Toshiba Semiconductor

Numer części TPCS8210
Szczegółowy opis  Lithium Ion Battery Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8210 Arkusz danych(HTML) 5 Page - Toshiba Semiconductor

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TPCS8210
2007-01-16
5
RDS (ON) – Ta
IDR – VDS
Capacitance – VDS
Vth – Ta
PD – Ta
Dynamic input/output characteristics
0
−100
−50
0
150
100
50
0.2
0.4
0.6
0.8
1
1.2
1.4
Common source
VDS = 10 V
ID = 200 μA
Pulse test
Common source
Pulse test
0
−50
10
20
30
40
50
60
0
50
150
100
ID = 5 A
2.5
1.25
ID = 5, 2.5, 1.25 A
ID = 5, 2.5, 1.25 A
VGS = 4.0 V
VGS = 2.5 V
VGS = 2.0 V
10
0.1
100
1000
10000
1
10
100
Ciss
Coss
Crss
Common source
Ta
= 25°C
f
= 1MHz
VGS = 0 V
Ambient temperature Ta (°C)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Total gate charge Qg (nC)
0
0
0.2
0.4
0.6
0.8
1
1.2
50
100
200
150
(1)
(4)
(3)
(2)
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t
= 10 s
0
0
5
10
15
20
25
30
4
8
12
16
20
24
28
32
0
2
4
6
8
10
12
VDS = 16 V
Common source
ID = 5 A
Ta
= 25°C
Pulse test
VGS
0.1
0
−0.2
−0.4
−0.6
−0.8
−1
0.3
0.5
1
10
3
5
VGS = 0 V
Common source
Ta
= 25°C
Pulse test
1
2
4


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