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TPD1033F Arkusz danych(PDF) 4 Page - Toshiba Semiconductor |
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TPD1033F Arkusz danych(HTML) 4 Page - Toshiba Semiconductor |
4 / 11 page TPD1033F 2006-10-31 4 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unite Drain-source voltage VDS 60 V DC VDD (1) 25 V Supply voltage Pulse VDD (2) 60 (Rs = 1Ω,τ= 250 ms) V DC VIN (1) -0.5 ~ 12 V Input voltage Pulse VIN (2) VDD (1) + 1.5 (t = 100 ms) V Diagnosis output voltage VDIAG -0.5 ~ 25 V Output current IO Internally limited A Input current IIN ± 10 mA Diagnosis output current IDIAG 5 mA 1.4 Note 1 Power dissipation (Ta = 25°C) PD 2.4 Note 2 W Operating temperature Topr - 40 ~ 110 °C Channel temperature Tch 150 °C Storage temperature Tstg - 55 ~ 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Resistance Characteristic Symbol Test Condition Unit 89.3 (Note 1) Thermal resistance Rth (ch-a) 52.1 (Note 2) °C/ W Note 1: Mounted on glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm) (DC) Note 2: Mounted on glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm) (t W ≤ 10 s) |
Podobny numer części - TPD1033F_07 |
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Podobny opis - TPD1033F_07 |
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