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2SC4214 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
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2SC4214 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SC4214 2007-11-01 1 TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 UHF TV Tuner RF Amplifier Applications • Low noise figure: NF = 2.8dB (typ.) • High power gain VCC = 4.5 V: Gpb = 15dB (typ.) • Excellent forward AGC characteristics Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 2 V Base current IB 4 mA Collector current IC 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 2 V, IC = 0 ⎯ ⎯ 1 μA Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 20 ⎯ ⎯ V DC current gain hFE VCE = 3.0 V, IC = 1 mA 40 100 ⎯ Transition frequency fT VCE = 3.0 V, IC = 1 mA 500 850 ⎯ MHz Reverse transfer capacitance Crb VCE = 2.0 V, IB = 0, f = 1 MHz ⎯ 0.3 0.5 pF Power gain Gpb 10 15 ⎯ dB Noise figure NF VCC = 4.5 V, VAGC = 2.0 V f = 800 MHz (Figure 1) ⎯ 2.8 4.5 dB AGC voltage VAGC VCC = 4.5 V, G.R. = −20dB f = 800 MHz (Note) 2.5 3.2 4.0 V Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3J1B Weight: 0.013 g (typ.) |
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