2SC2500_06 datasheet(2/4 Pages) TOSHIBA

Numer części	2SC2500

Szczegółowy opis	Silicon NPN Epitaxial Type (PCT Process)

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

2SC2500

2006-11-09

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 30 V, IE = 0

―

100

nA

Emitter cut-off current

IEBO

VEB = 6 V, IC = 0

―

100

nA

Collector-emitter breakdown voltage

VCEO

IC = 10 mA, IB = 0

10

―

V

Emitter-base breakdown voltage

VEBO

IC = 1 mA, IC = 0

6

―

V

hFE (1)

(Note 3)

VCE = 1 V, IC = 0.5 A

140

―

600

DC current gain

hFE (2)

VCE = 1 V, IC = 2 A

70

200

―

Collector-emitter saturation voltage

VCE (sat)

IC = 2 A, IB = 50 mA

―

0.2

0.5

V

Base-emitter voltage

VBE

VCE = 1 V, IC = 2 A

―

0.86

1.5

V

Transition frequency

fT

VCE = 1 V, IC = 0.5 A

―

150

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

―

27

―

pF

Note 3: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600

Marking

C2500

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Characteristics

indicator

Part No. (or abbreviation code)

Podobny numer części - 2SC2500_06

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Toshiba Semiconductor	2SC2500	153Kb / 2P	TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
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Podobny opis - 2SC2500_06

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Podobny numer części - 2SC2500_06

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