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2SJ104 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor

Numer części 2SJ104
Szczegółowy opis  For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ104 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor

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2SJ104
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ104
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
• High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
• Low RDS (ON) = 40 Ω (typ.) (IDSS = −5 mA)
• Complimentary to 2SK364
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
25
V
Gate current
IG
−10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 25 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
25
V
Drain current
IDSS
(Note 1)
VDS = −10 V, VGS = 0
−2.6
−20
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = −10 V, ID = −0.1 μA
0.2
2.0
V
Forward transfer admittance
⎪Yfs
VDS = −10 V, VGS = 0, f = 1 kHz
(Note 2)
12
30
mS
Input capacitance
Ciss
VDS = −10 V, VGS = 0, f = 1 MHz
105
pF
Reverse transfer capacitance
Crss
VDG = −10 V, ID = 0, f = 1 MHz
32
pF
Drain-source ON resistance
RDS (ON)
VDS = −10 mV, VGS = 0
(Note 2)
40
Ω
Note 1: IDSS classification GR: −2.6~−6.5 mA, BL: −6~−12 mA, V: −10~−20 mA
Note 2: Condition of the typical value IDSS = −5 mA
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)


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