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2SJ200 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SJ200
Szczegółowy opis  High Power Amplifier Application
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ200 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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2SJ200
2006-11-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain cut−off current
IDSS
VDS = −180 V, VGS = 0
−1.0
mA
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
±0.5
μA
Drain−source breakdown voltage
V (BR) DSS
ID = −10 mA, VGS = 0
−180
V
Gate−source cut−off voltage
(Note 2)
VGS (OFF)
VDS = −10 V, ID = −0.1 A
−0.8
−2.8
V
Drain−source saturation voltage
VDS (ON)
ID = −6 A, VGS = −10 V
−1.5
−5.0
V
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −3 A
4.0
S
Input capacitance
Ciss
VDS = −30 V, VGS = 0, f = 1 MHz
1300
Output capacitance
Coss
VDS = −30 V, VGS = 0, f = 1 MHz
350
Reverse transfer capacitance
Crss
VDS = −30 V, VGS = 0, f = 1 MHz
200
pF
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification
O: −0.8~−1.6,
Y: −1.4~−2.8
This transistor is an electrostatic sensitive device. Please handle with caution.
Marking


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