2SJ338

2006-11-16

1

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type

2SJ338

Audio-Frequency Power Amplifier Applications

High breakdown voltage

High forward transfer admittance

Complementary to 2SK2162

Characteristic

Symbol

Rating

Unit

Drain−source voltage

−180

V

Gate−source voltage

±20

V

Drain current

(Note 1)

−1

A

Power dissipation (Tc = 25°C)

20

W

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note 1: Ensure that the channel temperature does not exceed 150°C.

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability

data (i.e. reliability test report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

SC-64

TOSHIBA

2-7B1B

Weight: 0.36 g (typ.)

JEDEC

―

JEITA

SC-64

TOSHIBA

2-7J1B

Weight: 0.36 g (typ.)