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2SD2131 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor

Numer części 2SD2131
Szczegółowy opis  Silicon NPN Triple Diffused Type (Darlington)
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SD2131 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor

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2SD2131
2006-11-21
3
Collector-emitter voltage VCE (V)
IC – VCE
Base-emitter voltage VBE (V)
IC – VBE
hFE – IC
Collector current IC (A)
Base current IB (mA)
VCE – IB
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
VBE (sat) – IC
0
0
2
4
2
4
6
8
5
Common
emitter
Tc = 25°C
10
6
8
IB = 0.3 mA
3
2
1
0.7
0.5
0
1.5
0
0
2
4
0.8
1.6
2.4
3.2
Common emitter
VCE = 3 V
4.0
6
8
Tc = 100°C
25
−55
30000
0.05
Common emitter
VCE = 3 V
200
1000
5000
10000
0.1
0.3
3
5
Tc = 100°C
25
−55
20
0.5
1
10
500
3000
0.1
10
Tc = −55°C
100
25
Common emitter
IC/IB = 250
10
0.3
0.3
0.5
1
3
5
0.5
1
3
5
0.1
10
Tc = −55°C
100
25
Common emitter
IC/IB = 250
10
0.3
0.3
0.5
1
3
5
0.5
1
3
5
0.1
2.4
1
Common emitter
Tc = 25°C
0
0.3 0.5 1
3
10
100
300
0.4
0.8
1.2
1.6
2.0
5
30 50
IC = 8 A
3
5
0.1


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