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2SK1381 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SK1381
Szczegółowy opis  Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK1381 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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2SK1381
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±50
nA
Drain cut−off current
IDSS
VDS = 100 V, VGS = 0 V
100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 25 A
31
46
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
25
32
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
20
33
S
Input capacitance
Ciss
3700
Reverse transfer capacitance
Crss
580
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1500
pF
Rise time
tr
16
Turn−on time
ton
46
Fall time
tf
60
Switching time
Turn−off time
toff
185
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
88
Gate−source charge
Qgs
62
Gate−drain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 50 A
26
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
50
A
Pulse drain reverse current
(Note 1)
IDRP
200
A
Forward voltage (diode)
VDSF
IDR = 50 A, VGS = 0 V
−1.6
V
Reverse recovery time
trr
280
ns
Reverse recovered charge
Qrr
IDR = 50 A, VGS = 0 V
dIDR / dt = 50 A / μs
0.56
μC
Marking
K1381
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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