2SJ567 datasheet(2/6 Pages) TOSHIBA

Numer części	2SJ567

Szczegółowy opis	Silicon P-Channel MOS Type Switching Applications

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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2 / 6 page

2SJ567

2006-11-16

2

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

μA

Drain cutoff current

IDSS

VDS = −200 V, VGS = 0 V

⎯

−100

μA

Drain-source breakdown voltage

V (BR) DSS

ID = −10 mA, VGS = 0 V

−200

⎯

V

Gate threshold voltage

Vth

VDS = −10 V, ID = −1 mA

−1.5

⎯

−3.5

V

Drain-source ON-resistance

RDS (ON)

VGS = −10 V, ID = −1.5 A

⎯

1.6

2.0

Ω

Forward transfer admittance

⎪Yfs⎪

VDS = −10 V, ID = −1.5 A

1.0

2.0

⎯

S

Input capacitance

Ciss

⎯

410

⎯

Reverse transfer capacitance

Crss

⎯

40

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

145

⎯

pF

Rise time

tr

⎯

20

⎯

Turn-on time

ton

⎯

45

⎯

Fall time

tf

⎯

15

⎯

Switching time

Turn-off time

toff

⎯

85

⎯

ns

Total gate charge

(Gate source plus gate-drain)

Qg

⎯

10

⎯

Gate-source charge

Qgs

⎯

6

⎯

Gate-drain (“Miller”) charge

Qgd

VDD ∼− −160 V, VGS = −10 V,

ID = −2.5 A

⎯

4

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

⎯

−2.5

A

Pulse drain reverse current

(Note 1)

IDRP

⎯

−10

A

Forward voltage (diode)

VDSF

IDR = −2.5 A, VGS = 0 V

⎯

2.0

V

Reverse recovery time

trr

⎯

135

⎯

ns

Reverse recovery charge

Qrr

IDR = −2.5 A, VGS = 0 V,

dIDR/dt = 100 A/μs

⎯

0.81

⎯

μC

Marking

Duty <= 1%, tw = 10 μs

−10 V

0 V

VGS

RL = 66.7 Ω

VDD ∼− −100 V

ID = −1.5 A VOUT

J567

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

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