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Zakładka z wyszukiwarką danych komponentów |
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2SJ620 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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2SJ620 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page  2SJ620 2006-11-16 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = −100 V, VGS = 0 V ⎯ ⎯ −100 μA Drain-source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 V −100 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V VGS = −4 V, ID = −9 A ⎯ 85 120 Drain-source ON resistance RDS (ON) VGS = −10 V, ID = −9 A ⎯ 63 90 m Ω Forward transfer admittance ⎪Yfs⎪ VDS = −10 V, ID = −6 A 7 15 ⎯ S Input capacitance Ciss ⎯ 2900 ⎯ Reverse transfer capacitance Crss ⎯ 480 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 1000 ⎯ pF Rise time tr ⎯ 25 ⎯ Turn-ON time ton ⎯ 45 ⎯ Fall time tf ⎯ 25 ⎯ Switching time Turn-OFF time toff ⎯ 170 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 140 ⎯ Gate-source charge Qgs ⎯ 90 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− −80 V, VGS = −10 V, ID = −18 A ⎯ 50 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ −18 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ −72 A Forward voltage (diode) VDSF IDR = −18 A, VGS = 0 V ⎯ ⎯ 1.7 V Reverse recovery time trr ⎯ 220 ⎯ μs Reverse recovery charge Qrr IDR = −18 A, VGS = 0 V, dIDR/dt = 50 A/μs ⎯ 0.97 ⎯ μC Marking Duty <= 1%, tw = 10 μs −10 V 0 V VGS VDD ∼− −50 V ID = −9 A VOUT J620 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Podobny numer części - 2SJ620 |
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Podobny opis - 2SJ620 |
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