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2SK170 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
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2SK170 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SK170 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS −40 V Gate current IG 10 mA Drain power dissipation PD 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current IGSS VGS = −30 V, VDS = 0 ⎯ ⎯ −1.0 nA Gate-drain breakdown voltage V (BR) GDS VDS = 0, IG = −100 μA −40 ⎯ ⎯ V Drain current IDSS (Note) VDS = 10 V, VGS = 0 2.6 ⎯ 20 mA Gate-source cut-off voltage VGS (OFF) VDS = 10 V, ID = 0.1 μA −0.2 ⎯ −1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, VGS = 0, f = 1 kHz ⎯ 22 ⎯ mS Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 30 ⎯ pF Reverse transfer capacitance Crss VDG = 10 V, ID = 0, f = 1 MHz ⎯ 6 ⎯ pF NF (1) VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ, f = 1 kHz ⎯ 1.0 10 Noise figure NF (2) VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ, f = 1 kHz ⎯ 0.5 2 dB Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA Unit: mm JEDEC TC-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) |
Podobny numer części - 2SK170_07 |
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Podobny opis - 2SK170_07 |
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