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2SK2782 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor

Numer części 2SK2782
Szczegółowy opis  Silicon N-Channel MOS Type Chopper Regulator, DC/DC Converter and Motor Drive Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2782 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor

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2SK2782
2006-11-17
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
2
−π−MOSV)
2SK2782
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drain−source ON-resistance
: RDS (ON) = 0.039 Ω (typ.)
High forward transfer admittance
: |Yfs| = 11 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
3.125
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 530 μH, RG = 25 Ω, ID = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
SC-64
TOSHIBA
2-7B5B
Weight: 0.36 g (typ.)
JEDEC
JEITA
SC-64
TOSHIBA
2-7B7B
Weight: 0.36 g (typ.)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS
60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate−source voltage
VGSS
±20
V
DC (Note 1)
ID
20
A
Drain current
Pulse (Note 1)
IDP
50
A
Drain power dissipation (Tc = 25°C)
PD
40
W
Single-pulse avalanche energy
(Note 2)
EAS
156
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C


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