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2SK2965 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części 2SK2965
Szczegółowy opis  Silicon N Channel MOS Type Switching Regulator, DC−DC Converter and Motor Drive Applications
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK2965 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

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2SK2965
2006-11-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut–off current
IDSS
VDS = 200 V, VGS = 0 V
100
μA
Drain–source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain–source ON resistance
RDS (ON)
VGS = 10 V, ID = 5.5 A
0.15
0.26
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5.5 A
5.0
10
S
Input capacitance
Ciss
1200
Reverse transfer capacitance
Crss
100
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
290
pF
Rise time
tr
15
Turn–on time
ton
25
Fall time
tf
10
Switching time
Turn–off time
toff
75
ns
Total gate charge
(gate–source plus gate–drain)
Qg
30
Gate–source charge
Qgs
20
Gate–drain (“miller”) Charge
Qgd
VDD ≈ 100 V, VGS = 10 V, ID = 10 A
10
nC
Source–Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
11
A
Pulse drain reverse current
(Note 1)
IDRP
33
A
Forward voltage (diode)
VDSF
IDR = 11 A, VGS = 0 V
−2.0
V
Reverse recovery time
trr
175
ns
Reverse recovery charge
Qrr
IDR = 11 A, VGS = 0 V, IDR / dt = 100 A / μs
1.3
μC
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2965
Part No. (or abbreviation code)


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