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2SK2965 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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2SK2965 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2965 2006-11-21 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut–off current IDSS VDS = 200 V, VGS = 0 V — — 100 μA Drain–source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 200 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 — 3.5 V Drain–source ON resistance RDS (ON) VGS = 10 V, ID = 5.5 A — 0.15 0.26 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 5.5 A 5.0 10 — S Input capacitance Ciss — 1200 — Reverse transfer capacitance Crss — 100 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 290 — pF Rise time tr — 15 — Turn–on time ton — 25 — Fall time tf — 10 — Switching time Turn–off time toff — 75 — ns Total gate charge (gate–source plus gate–drain) Qg — 30 — Gate–source charge Qgs — 20 — Gate–drain (“miller”) Charge Qgd VDD ≈ 100 V, VGS = 10 V, ID = 10 A — 10 — nC Source–Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 11 A Pulse drain reverse current (Note 1) IDRP — — — 33 A Forward voltage (diode) VDSF IDR = 11 A, VGS = 0 V — — −2.0 V Reverse recovery time trr — 175 — ns Reverse recovery charge Qrr IDR = 11 A, VGS = 0 V, IDR / dt = 100 A / μs — 1.3 — μC Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K2965 Part No. (or abbreviation code) |
Podobny numer części - 2SK2965 |
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Podobny opis - 2SK2965 |
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